View SA5212_2285628.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SA5212a transimpedance amplifier (140mhz) product specification replaces datasheet ne/sa/se5212a of 1995 apr 26 ic19 data handbook 1998 oct 07 integrated circuits
philips semiconductors product specification SA5212a transimpedance amplifier (140mhz) 2 1998 oct 07 853-1266 20142 description the SA5212a is a 14k w transimpedance, wideband, low noise differential output amplifier, particularly suitable for signal recovery in fiber optic receivers and in any other applications where very low signal levels obtained from high-impedance sources need to be amplified. features ? extremely low noise: 2.5pa/ hz ? single 5v supply ? large bandwidth: 140mhz ? differential outputs ? low input/output impedances ? 14k w differential transresistance ? esd hardened applications ? fiber-optic receivers, analog and digital ? current-to-voltage converters pin configuration gnd 2 i in v cc gnd 1 gnd 1 gnd 2 out () out (+) n, fe, d packages 1 2 3 45 6 7 8 sd00336 figure 1. pin configuration ? wideband gain block ? medical and scientific instrumentation ? sensor preamplifiers ? single-ended to differential conversion ? low noise rf amplifiers ? rf signal processing ordering information description temperature range order code dwg # 8-pin plastic small outline (so) package -40 c to +85 c SA5212ad sot96-1 8-pin plastic dual in-line package (dip) -40 c to +85 c SA5212an sot97-1 8-pin ceramic dual in-line package (dip) -40 c to +85 c SA5212afe 0580a absolute maximum ratings symbol parameter SA5212a unit v cc power supply 6 v power dissipation, t a =25 c (still air) 1 p 8-pin plastic dip 1100 mw p d max 8-pin plastic so 750 mw 8-pin cerdip 750 mw i in max maximum input current 2 5 ma t a operating ambient temperature range -40 to 85 c t j operating junction -55 to 150 c t stg storage temperature range -65 to 150 c notes: 1. maximum dissipation is determined by the operating ambient temperature and the thermal resistance: 8-pin plastic dip: 110 c/w 8-pin plastic so: 160 c/w 8-pin cerdip: 165 c/w 2. the use of a pull-up resistor to v cc , for the pin diode, is recommended
philips semiconductors product specification SA5212a transimpedance amplifier (140mhz) 1998 oct 07 3 recommended operating conditions symbol parameter rating unit v cc supply voltage range 4.5 to 5.5 v t a ambient temperature ranges -40 to +85 c t j junction temperature ranges -40 to +105 c dc electrical characteristics minimum and maximum limits apply over operating temperature range at v cc =5v, unless otherwise specified. typical data applies at v cc =5v and t a =25 c 1 . symbol parameter test conditions min typ max unit v in input bias voltage 0.55 0.8 1.05 v v o output bias voltage 2.5 3.3 3.8 v v os output offset voltage 120 mv i cc supply current 20 26 33 ma i omax output sink/source current 3 4 ma i in maximum input current (2% linearity) test circuit 6, procedure 2 40 80 m a i n max maximum input current overload threshold test circuit 6, procedure 4 60 120 m a notes: 1. as in all high frequency circuits, a supply bypass capacitor should be located as close to the part as possible.
philips semiconductors product specification SA5212a transimpedance amplifier (140mhz) 1998 oct 07 4 ac electrical characteristics minimum and maximum limits apply over operating temperature range at v cc =5v, unless otherwise specified. typical data applies at v cc =5v and t a =25 c 5 . symbol parameter test conditions min typ max unit r t transresistance (differential output) dc tested, r l = test circuit 6, procedure 1 9.0 14 19 k w r o output resistance (differential output) dc tested 14 30 46 w r t transresistance (single-ended output) dc tested, r l = 4.5 7 9.5 k w r o output resistance (single-ended output) dc tested 7 15 23 w test circuit 1 d package, f 3db bandwidth (-3db) t a = 25 c 100 140 mhz n, fe packages, t a = 25 c 100 120 r in input resistance 70 110 150 w c in input capacitance 10 18 pf d r/ d v transresistance power supply sensitivity v cc = 5 0.5v 9.6 %/v d r/ d t transresistance ambient temperature sensitivity d package d t a = t a max -t a min 0.05 %/ c i n rms noise current spectral density (referred to input) test circuit 2 f = 10mhz t a = 25 c 2.5 pa/ hz integrated rms noise current over the band- t a = 25 c test circuit 2 d f = 50mhz 20 g width (referred to input) c s = 0 1 d f = 100mhz 27 i t d f = 200mhz 40 na t d f = 50mhz 22 c s = 1pf d f = 100mhz 32 d f = 200mhz 52 psrr power supply rejection ratio 2 any package dc tested d v cc = 0.1v equivalent ac test circuit 3 20 33 db psrr power supply rejection ratio 2 (ecl configuration) any package f = 0.1mhz 1 test circuit 4 23 db v o max maximum differential output voltage swing r l = test circuit 6, procedure 3 1.7 3.2 v p-p v in max maximum input amplitude for output duty cycle of 50 5% 3 test circuit 5 325 mv p-p t r rise time for 50mv output signal 4 test circuit 5 2.0 ns notes: 1. package parasitic capacitance amounts to about 0.2pf. 2. psrr is output referenced and is circuit board layout dependent at higher frequencies. for best performance use rf filter in v cc line. 3. guaranteed by linearity and over load tests. 4. t r defined as 20-80% rise time. it is guaranteed by -3db bandwidth test. 5. as in all high frequency circuits, a supply bypass capacitor should be located as close to the part as possible.
philips semiconductors product specification SA5212a transimpedance amplifier (140mhz) 1998 oct 07 5 test circuits test circuit 1 r t v out v in 2 s21 rr t v out v in 4 s21 r single-ended differential r o z o 1 s22 1 s22 33 r o 2z o 1 s22 1 s22 66 network analyzer s-parameter test set port 1 port 2 33 in dut out out 50 33 gnd 1 gnd 2 v cc z o = 50 w 1 m f r l = 50 w r = 1k 1 m f 0.1 m f test circuit 2 spectrum analyzer 33 in dut out out 33 gnd 1 gnd 2 v cc 1 m f r l = 50 1 m f a v = 60db nc sd00337 figure 2. test circuits 1 and 2 test circuit 3 network analyzer s-parameter test set port 1 port 2 v cc gnd 1 gnd 2 nc current probe 1mv/ma cal test transformer nh0300hb 100 33 33 16 out out bal. 10 m f 0.1 m f 10 m f 1 m f 1 m f 50 unbal. 5v + d v 10 m f dut in sd00338 figure 3. test circuit 3
philips semiconductors product specification SA5212a transimpedance amplifier (140mhz) 1998 oct 07 6 test circuits (continued) test circuit 4 network analyzer s-parameter test set port 1 port 2 current probe 1mv/ma cal test transformer nh0300hb 100 33 33 16 out out bal. 50 unbal. v cc gnd 1 gnd 2 nc 0.1 m f 1 m f 1 m f 0.1 m f 10 m f 5.2v + d v 10 m f in sd00339 figure 4. test circuit 4 test circuit 5 oscilloscope 33 33 1k out out gnd 2 gnd 1 5v in 1 m f 1 m f pulse gen. measurement done using differential wave forms 0.1 m f 50 z o = 50 w a b z o = 50 w dut sd00545 figure 5. test circuit 5
philips semiconductors product specification SA5212a transimpedance amplifier (140mhz) 1998 oct 07 7 test circuits (continued) gnd 2 test circuit 8 out + out gnd 1 in dut i in ( m a) 5v v out (v) + typical differential output voltage vs current input 2.00 1.60 1.20 0.80 0.40 0.00 0.40 0.80 1.20 1.60 2.00 200 160 120 80 40 0 40 80 120 160 200 differential output voltage (v) current input ( m a) ne5212a test conditions procedure 1 r t measured at 30 m a r t = (v o1 v o2 )/(+30 m a (30 m a)) where: v o1 measured at i in = +30 m a v o2 measured at i in = 30 m a procedure 2 linearity = 1 abs((v oa v ob ) / (v o3 v o4 )) where: v o3 measured at i in = +60 m a v o4 measured at i in = 60 m a v oa r t ( 60 a) v ob v ob r t ( 60 a) v ob procedure 3 v omax = v o7 v o8 where: v o7 measured at i in = +130 m a v o8 measured at i in = 130 m a procedure 4 i in test pass conditions: v o7 v o5 > 20mv and v 06 v o5 > 20mv where: v o5 measured at i in = +800 m a v o6 measured at i in = 80 m a v o7 measured at i in = +130 m a v o8 measured at i in = 130 m a sd00340 figure 6. test circuit 8
philips semiconductors product specification SA5212a transimpedance amplifier (140mhz) 1998 oct 07 8 typical performance characteristics population (%) ne5212a typical bandwidth distribution (75 parts from 3 wafer lots) 50 40 30 20 10 0 112.5 122.5 132.5 142.5 152.5 162.5 frequency (mhz) pin 5 single-ended r l = 50 w v cc = 5.0v t a = 25 c n, f pkg 17 60 20 0 20 40 60 80 100 120 40 output resistance ( ) ambient temperature ( c) pin 5 dc tested pin 7 16 15 14 13 12 11 10 9 w 140 v cc = 5.0v ne5212a output resistance vs temperature ne5212a power supply rejection ratio vs temperature 40 39 38 37 36 35 34 33 60 40 20 0 20 40 100 60 120 80 power supply rejection ratio (db) ambient temperature ( c) v cc = 5.0v d v cc = 0.1v dc tested output referred 140 ne5212a differential transresistance vs temperature 17.0 60 40 20 0 20 40 100 60 120 80 differential transresistance (k ) 140 ambient temperature ( c) v cc = 5.0v dc tested r l = 16.5 16.0 15.5 15.0 14.5 14.0 w 60 40 20 0 20 40 100 60 120 80 140 ambient temperature ( c) 80 60 40 20 0 20 40 60 v cc = 5.0v v os = v out5 v out7 output offset voltage (mv) ne5212a output offset voltage vs temperature ne5212a differential output swing vs temperature v cc = 5.0v dc tested r l = 60 40 20 0 20 40 100 60 120 80 140 ambient temperature ( c) 3.8 differential output swing (v) 3.6 3.4 3.2 3.0 2.8 2.6 2.4 60 40 20 0 20 40 100 60 120 80 140 ambient temperature ( c) v cc = 5.0v 30 supply current (ma) 29 28 27 26 25 ne5212a output bias voltage vs temperature ne5212a input bias voltage vs temperature ne5212a supply current vs temperature v cc = 5.0v 60 40 20 0 20 40 100 60 120 80 140 ambient temperature ( c) 950 input bias voltage (mv) 900 850 800 750 700 650 600 60 40 20 0 20 40 100 60 120 80 140 ambient temperature ( c) 3.50 output bias voltage (v) 3.45 3.40 3.35 3.30 3.25 pin 5 pin 7 v cc = 5.0v sd00341 figure 7. typical performance characteristics
philips semiconductors product specification SA5212a transimpedance amplifier (140mhz) 1998 oct 07 9 typical performance characteristics (continued) gain vs frequency gain vs frequency output resistance vs frequency gain vs frequency gain and phase shift vs frequency 12 11 10 9 8 7 6 5 4 3 0.1 1 10 100 gain (db) frequency (mhz) 11 10 9 8 7 6 5 4 3 0.1 1 10 100 gain (db) frequency (mhz) 0.1 1 10 100 frequency (mhz) 80 output resistance ( ) w 70 60 50 40 30 20 10 gain vs frequency output resistance vs frequency gain and phase shift vs frequency gain and phase shift vs frequency 5.5v 4.5v 5.0v pin 5 t a = 25 c n pkg pin 7 t a = 25 c n pkg 5.5v 5.0v 4.5v v cc = 5v t a = 25 c n pkg pin 7 pin 5 11 0.1 1 10 100 gain (db) frequency (mhz) 10 9 8 7 6 5 4 3 pin 5 v cc = 5v n pkg 25 c 55 c 125 c 85 c 55 c 125 c 11 0.1 1 10 100 gain (db) 10 9 8 7 6 5 4 3 pin 7 v cc = 5v n pkg frequency (mhz) 55 c 125 c 55 c 125 c 100 output resistance ( ) w 0.1 1 10 100 frequency (mhz) 90 80 70 60 50 40 30 20 10 t a = 25 c v cc = 5v d pkg 11 0.1 1 10 100 gain (db) 10 9 8 7 6 5 4 3 frequency (mhz) pin 5 v cc = 5v n pkg t a = 25 c 45 135 225 phase ( ) o 11 0.1 1 10 100 gain (db) 10 9 8 7 6 5 4 3 180 270 360 phase ( ) o frequency (mhz) pin 7 v cc = 5v d pkg t a = 25 c f f f 11 0.1 1 10 100 gain (db) 10 9 8 7 6 5 4 3 180 270 360 phase ( ) o pin 7 v cc = 5v n pkg t a = 25 c frequency (mhz) sd00342 figure 8. typical performance characteristics (cont.)
philips semiconductors product specification SA5212a transimpedance amplifier (140mhz) 1998 oct 07 10 typical performance characteristics (continued) frequency (mhz) gain and phase shift vs frequency output voltage vs input current differential output voltage vs input current differential output voltage vs input current group delay vs frequency output step response 0 2 4 6 8 10 12 14 16 18 20 (ns) v cc = 5v t a = 25 c 20mv/div 10 8 6 4 2 0 0.1 20 40 60 80 100 120 140 160 delay (ns) 2.000 0 2.000 output voltage (v) 150.0 150.0 input current ( m a) 25 c 55 c 125 c 85 c 55 c 25 c 85 c 125 c 11 10 9 8 7 6 5 4 3 0.1 1 10 100 frequency (mhz) 0 90 180 gain (db) phase ( ) o 4.5 differential output voltage (v) 2.0 150.0 150.0 0 125 c 85 c 25 c 55 c input current ( m a) 85 c 125 c 25 c 55 c 2.0 differential output voltage (v) 0 2.0 150.0 150.0 0 input current ( m a) 5.5v 4.5v 5.0v 5.5v 4.5v 5.0v pin 5 v cc = 5v d pkg t a = 25 c sd00343 figure 9. typical performance characteristics (cont.)
philips semiconductors product specification SA5212a transimpedance amplifier (140mhz) 1998 oct 07 11 theory of operation transimpedance amplifiers have been widely used as the preamplifier in fiber-optic receivers. the SA5212a is a wide bandwidth (typically 140mhz) transimpedance amplifier designed primarily for input currents requiring a large dynamic range, such as those produced by a laser diode. the maximum input current before output stage clipping occurs at typically 240 m a. the SA5212a is a bipolar transimpedance amplifier which is current driven at the input and generates a differential voltage signal at the outputs. the forward transfer function is therefore a ratio of the differential output voltage to a given input current with the dimensions of ohms. the main feature of this amplifier is a wideband, low-noise input stage which is desensitized to photodiode capacitance variations. when connected to a photodiode of a few picofarads, the frequency response will not be degraded significantly. except for the input stage, the entire signal path is differential to provide improved power-supply rejection and ease of interface to ecl type circuitry. a block diagram of the circuit is shown in figure 10. the input stage (a1) employs shunt-series feedback to stabilize the current gain of the amplifier. the transresistance of the amplifier from the current source to the emitter of q 3 is approximately the value of the feedback resistor, r f =7k w . the gain from the second stage (a2) and emitter followers (a3 and a4) is about two. therefore, the differential transresistance of the entire amplifier, r t is r t v out (diff) i in 2r f 2(7.2k) 14.4k the single-ended transresistance of the amplifier is typically 7.2k w . the simplified schematic in figure 11 shows how an input current is converted to a differential output voltage. the amplifier has a single input for current which is referenced to ground 1. an input current from a laser diode, for example, will be converted into a voltage by the feedback resistor r f . the transistor q1 provides most of the open loop gain of the circuit, a vol 70. the emitter follower q 2 minimizes loading on q 1 . the transistor q 4 , resistor r 7 , and v b1 provide level shifting and interface with the q 15 q 16 differential pair of the second stage which is biased with an internal reference, v b2 . the differential outputs are derived from emitter followers q 11 q 12 which are biased by constant current sources. the collectors of q 11 q 12 are bonded to an external pin, v cc2 , in order to reduce the feedback to the input stage. the output impedance is about 17 w single-ended. for ease of performance evaluation, a 33 w resistor is used in series with each output to match to a 50 w test system. bandwidth calculations the input stage, shown in figure 12, employs shunt-series feedback to stabilize the current gain of the amplifier. a simplified analysis can determine the performance of the amplifier. the equivalent input capacitance, c in , in parallel with the source, i s , is approximately 7.5pf, assuming that c s =0 where c s is the external source capacitance. since the input is driven by a current source the input must have a low input resistance. the input resistance, r in , is the ratio of the incremental input voltage, v in , to the corresponding input current, i in and can be calculated as: r in v in i in r f 1 a vol 7.2k 70 103 more exact calculations would yield a higher value of 110 w . thus c in and r in will form the dominant pole of the entire amplifier; f 3db 1 2 r in c in assuming typical values for r f = 7.2k w , r in = 110 w , c in = 10pf f 3db 1 2 (110) 10 10 12 145mhz the operating point of q1, figure 2, has been optimized for the lowest current noise without introducing a second dominant pole in the pass-band. all poles associated with subsequent stages have been kept at sufficiently high enough frequencies to yield an overall single pole response. although wider bandwidths have been achieved by using a cascade input stage configuration, the present solution has the advantage of a very uniform, highly desensitized frequency response because the miller effect dominates over the external photodiode and stray capacitances. for example, assuming a source capacitance of 1pf, input stage voltage gain of 70, r in = 60 w then the total input capacitance, c in = (1+7.5) pf which will lead to only a 12% bandwidth reduction. input output + output a1 a2 a3 a4 r f sd00327 figure 10. SA5212a block diagram noise most of the currently installed fiber-optic systems use non-coherent transmission and detect incident optical power. therefore, receiver noise performance becomes very important. the input stage achieves a low input referred noise current (spectral density) of 3.5pa/ hz . the transresistance configuration assures that the external high value bias resistors often required for photodiode biasing will not contribute to the total noise system noise. the equivalent input rms noise current is strongly determined by the quiescent current of q 1 , the feedback resistor r f , and the bandwidth; however, it is not dependent upon the internal miller-capacitance. the measured wideband noise was 52na rms in a 200mhz bandwidth.
philips semiconductors product specification SA5212a transimpedance amplifier (140mhz) 1998 oct 07 12 input out out+ photodiode vb2 + + r 1 r 3 r 12 r 13 r 5 r 4 r 7 r 14 r 15 q 1 q 3 q 2 q 4 q 15 q 16 q 11 q 12 gnd 2 gnd 1 v cc2 v cc1 r 2 sd00328 figure 11. transimpedance amplifier v cc v eq3 v in i in input i f i b q1 q2 q3 r2 r3 r4 r f r1 i c1 sd00329 figure 12. shunt-series input stage dynamic range the electrical dynamic range can be defined as the ratio of maximum input current to the peak noise current: electrical dynamic range, d e , in a 200mhz bandwidth assuming i inmax = 120 m a and a wideband noise of i eq =52na rms for an external source capacitance of c s = 1pf. d e (max. input current) (peak noise current) d e (db) 20 log (120 10 6 ) (2 52na) d e (db) 20 log (120 a) (73na) 64db in order to calculate the optical dynamic range the incident optical power must be considered. for a given wavelength l ; energy of one photon = hc watt sec (joule) where h=planck's constant = 6.6 10 -34 joule sec. c = speed of light = 3 10 8 m/sec c / l = optical frequency no. of incident photons/sec= where p=optical incident power no. of incident photons/sec = p hc where p = optical incident power no. of generated electrons/sec = p hc where h = quantum efficiency no. of generated electron hole paris no. of incident photons i p hc e amps (coulombs sec.) where e = electron charge = 1.6 10 -19 coulombs responsivity r = e hc amp/watt i p r assuming a data rate of 400 mbaud (bandwidth, b=200mhz), the noise parameter z may be calculated as: 1 z i eq qb 52 10 9 (1.6 10 19 )(200 10 6 ) 1625 amp amp where z is the ratio of rms noise output to the peak response to a single hole-electron pair. assuming 100% photodetector quantum efficiency, half mark/half space digital transmission, 850nm lightwave and using gaussian approximation, the minimum required optical power to achieve 10 -9 ber is: p avmin 12 hc bz 12 (2.3 10 19 ) 200 10 6 1625 897nw 30.5dbm, where h is planck's constant, c is the speed of light, l is the wavelength. the minimum input current to the SA5212a, at this input power is: i avmin qp avmin hc 897 10 9 1.6 10 19 2.3 10 19 = 624na
philips semiconductors product specification SA5212a transimpedance amplifier (140mhz) 1998 oct 07 13 choosing the maximum peak overload current of i avmax =120 m a, the maximum mean optical power is: out+ out in v in ne5212a r = 560 a. non-inverting 20db amplifier out out+ in ne5212a r = 560 v in b. inverting 20db amplifier out out+ in ne5212a r = 560 v in c. differential 20db amplifier sd00344 figure 13. variable gain circuit p avmax hci avmax q 2.3 10 19 (120 10 6 ) 1.6 10 19 = 172 m w or 7.6dbm thus the optical dynamic range, d o is: d o = p avmax - p avmin = -30.5 -(-7.6) = 22.8db. this represents the maximum limit attainable with the SA5212a operating at 200mhz bandwidth, with a half mark/half space digital transmission at 820nm wavelength. application information package parasitics, particularly ground lead inductances and parasitic capacitances, can significantly degrade the frequency response. since the SA5212a has differential outputs which can feed back signals to the input by parasitic package or board layout capacitances, both peaking and attenuating type frequency response shaping is possible. constructing the board layout so that ground 1 and ground 2 have very low impedance paths has produced the best results. this was accomplished by adding a ground-plane stripe underneath the device connecting ground 1, pins 811, and ground 2, pins 1 and 2 on opposite ends of the so14 package. this ground-plane stripe also provides isolation between the output return currents flowing to either v cc2 or ground 2 and the input photodiode currents to flowing to ground 1. without this ground-plane stripe and with large lead inductances on the board, the part may be unstable and oscillate near 800mhz. the easiest way to realize that the part is not functioning normally is to measure the dc voltages at the outputs. if they are not close to their quiescent values of 3.3v (for a 5v supply), then the circuit may be oscillating. input pin layout necessitates that the photodiode be physically very close to the input and ground 1. connecting pins 3 and 5 to ground 1 will tend to shield the input but it will also tend to increase the capacitance on the input and slightly reduce the bandwidth. as with any high-frequency device, some precautions must be observed in order to enjoy reliable performance. the first of these is the use of a well-regulated power supply. the supply must be capable of providing varying amounts of current without significantly changing the voltage level. proper supply bypassing requires that a good quality 0.1 m f high-frequency capacitor be inserted between v cc1 and v cc2 , preferably a chip capacitor, as close to the package pins as possible. also, the parallel combination of 0.1 m f capacitors with 10 m f tantalum capacitors from each supply, v cc1 and v cc2 , to the ground plane should provide adequate decoupling. some applications may require an rf choke in series with the power supply line. separate analog and digital ground leads must be maintained and printed circuit board ground plane should be employed whenever possible. basic configuration a trans resistance amplifier is a current-to-voltage converter. the forward transfer function then is defined as voltage out divided by current in, and is stated in ohms. the lower the source resistance, the higher the gain. the SA5212a has a differential transresistance of 14k w typically and a single-ended transresistance of 7k w typically. the device has two outputs: inverting and non-inverting. the output voltage in the differential output mode is twice that of the output voltage in the single-ended mode. although the device can be used without coupling capacitors, more care is required to avoid upsetting the internal bias nodes of the device. figure 13 shows some basic configurations. variable gain figure 14 shows a variable gain circuit using the SA5212a and the sa5230 low voltage op amp. this op amp is configured in a non-inverting gain of five. the output drives the gate of the sd210 dmos fet. the series resistance of the fet changes with this output voltage which in turn changes the gain of the SA5212a. this circuit has a distortion of less than 1% and a 25db range, from -42.2dbm to -15.9dbm at 50mhz, and a 45db range, from -60dbm to -14.9dbm at 10mhz with 0 to 1v of control voltage at v cc . sd210 out+ out 05v in +5v 10k 2.4k 01v 51 ne5212a v cc rf out rf in 0.1 m f sd00345 figure 14. variable gain circuit
philips semiconductors product specification SA5212a transimpedance amplifier (140mhz) 1998 oct 07 14 16mhz crystal oscillator figure 15 shows a 16mhz crystal oscillator operating in the series resonant mode using the SA5212a. the non-inverting input is fed back to the input of the SA5212a in series with a 2pf capacitor. the output is taken from the inverting output. +5v out+ out in ne5212a sd00346 figure 15. 16mhz crystal oscillator digital fiber optic receiver figures 16 and 17 show a fiber optic receiver using off-the-shelf components. the receiver shown in figure 16 uses the SA5212a, the philips semiconductors 10116 ecl line receiver, and philips/amperex bpf31 pin diode. the circuit is a capacitor-coupled receiver and utilizes positive feedback in the last stage to provide the hysteresis. the amount of hysteresis can be tailored to the individual application by changing the values of the feedback resistors to maintain the desired balance between noise immunity and sensitivity. at room temperature, the circuit operates at 50mbaud with a ber of 10e-10 and over the automotive temperature range at 40mbaud with a ber of 10e-9. higher speed experimental diodes have been used to operate this circuit at 220mbaud with a ber of 10e-10. figure 17 depicts a ttl receiver using the SA5212a and the sa5214 fast amplifier system along with the philips/amperex pin diode. the system shown is optimized for 50 mb/s non return to zero (nrz) data. a link status indication is provided along with a jamming function when the input level is below a user-programmable threshold level. 4.7 +5.0 1k 1 2 3 4 6 8 5 7 bpf31 15v 5.2v 1k 9 10 11 6 7 16 1 1/3 10116 ne5212a 510 510 5 4 8 3 2 510 510 100pf 100pf 1k 1k 1k 1k 13 12 14 15 510 510 ecl ecl 0.01 m f 0.01 m f 0.01 m f 0.01 m f 0.1 m f 0.1 m f 0.1 m f 1.0 m f 2.7 m h 4.7 m f 4.7 m f 0.1 m f v ee v ee v bb 1 v bb 1 v bb 1 v bb 1 1/3 10116 1/3 10116 v ee v cc note: 1. tie all v bb points together. sd00347 figure 16. ecl fiber optic receiver
philips semiconductors product specification SA5212a transimpedance amplifier (140mhz) 1998 oct 07 15 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 1 2 3 4 5 6 7 8 led c pkdet thresh gnd a flag jam v ccd v cca gnd d ttl out in 1b in 1a c azp c azn out 2b in 8b out 2a in 8a r hyst r pkdet ne5214 out+ gnd 2 out gnd 2 gnd 1 gnd 1 v cc i in ne5212a r2 220 d1 led c9 100pf 100pf c7 .01 m f 47 m f c1 c2 gnd +v cc 0.1 m f r4 5.1k r3 47k v out (ttl) l3 10 m h l2 10 m h c11 c10 .01 m f .01 m f c13 c12 10 m f 10 m f c8 l1 10 m h bpf31 optical input r1 100 c5 1.0 m f c6 .01 m f .01 m f c4 10 m f c3 sd00348 figure 17. a 50mb/s ttl digital fiber optic receiver
philips semiconductors product specification SA5212a transimpedance amplifier (140mhz) 1998 oct 07 16 1 2 3 4 5 6 7 8 gnd1 gnd1 out+ gnd2 out gnd2 i in v cc ecn no.: 99918 1990 jul 5 sd00489 figure 18. SA5212a bonding diagram die sales disclaimer due to the limitations in testing high frequency and other parameters at the die level, and the fact that die electrical characteristics may shift after packaging, die electrical parameters are not specified and die are not guaranteed to meet electrical characteristics (including temperature range) as noted in this data sheet which is intended only to specify electrical characteristics for a packaged device. all die are 100% functional with various parametrics tested at the wafer level, at room temperature only (25 c), and are guaranteed to be 100% functional as a result of electrical testing to the point of wafer sawing only. although the most modern processes are utilized for wafer sawing and die pick and place into waffle pack carriers, it is impossible to guarantee 100% functionality through this process. there is no post waffle pack testing performed on individual die. since philips semiconductors has no control of third party procedures in the handling or packaging of die, philips semiconductors assumes no liability for device functionality or performance of the die or systems on any die sales. although philips semiconductors typically realizes a yield of 85% after assembling die into their respective packages, with care customers should achieve a similar yield. however, for the reasons stated above, philips semiconductors cannot guarantee this or any other yield on any die sales.
philips semiconductors product specification SA5212a transimpedance amplifier (140mhz) 1998 oct 07 17 dip8: plastic dual in-line package; 8 leads (300 mil) sot97-1
philips semiconductors product specification SA5212a transimpedance amplifier (140mhz) 1998 oct 07 18 so8: plastic small outline package; 8 leads; body width 3.9mm sot96-1
philips semiconductors product specification SA5212a transimpedance amplifier (140mhz) 1998 oct 07 19 0580a 8-pin (300 mils wide) ceramic dual in-line (f) package notes: 1. controlling dimension: inches. millimeters are 2. dimension and tolerancing per ansi y14. 5m-1982. 3. ato, ado, and aeo are reference datums on the body 4. these dimensions measured with the leads 5. pin numbers start with pin #1 and continue and include allowance for glass overrun and meniscus on the seal line, and lid to base mismatch. constrained to be perpendicular to plane t. counterclockwise to pin #8 when viewed shown in parentheses. from the top. 0.200 (5.08) 0.010 (0.254) te d 0.023 (0.58) 0.015 (0.38) 0.165 (4.19) 0.125 (3.18) 0.165 (4.19) 0.175 (4.45) 0.145 (3.68) 0.320 (8.13) 0.290 (7.37) (note 4) bsc 0.300 (7.62) 0.395 (10.03) 0.300 (7.62) (note 4) 0.015 (0.38) 0.010 (0.25) 0.035 (0.89) 0.020 (0.51) d pin # 1 e 0.303 (7.70) 0.245 (6.22) 0.100 (2.54) bsc 0.408 (10.36) 0.376 (9.55) 0.055 (1.40) 0.030 (0.76) t seating plane 0.070 (1.78) 0.050 (1.27) 0.055 (1.40) 0.030 (0.76) 8530580a 006688
philips semiconductors product specification SA5212a transimpedance amplifier (140mhz) 1998 oct 07 20 definitions short-form specification e the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition e limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the dev ice at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limi ting values for extended periods may affect device reliability. application information e applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support e these products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use i n such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes e philips semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. philips semiconductors ass umes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or m ask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right in fringement, unless otherwise specified. philips semiconductors 811 east arques avenue p.o. box 3409 sunnyvale, california 940883409 telephone 800-234-7381 ? copyright philips electronics north america corporation 1998 all rights reserved. printed in u.s.a. date of release: 10-98 document order number: 9397 750 04625
data sheet status objective specification preliminary specification product specification product status development qualification production definition [1] this data sheet contains the design target or goal specifications for product development. specification may change in any manner without notice. this data sheet contains preliminary data, and supplementary data will be published at a later date. philips semiconductors reserves the right to make chages at any time without notice in order to improve design and supply the best possible product. this data sheet contains final specifications. philips semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. data sheet status [1] please consult the most recently issued datasheet before initiating or completing a design.

▲Up To Search▲

Price & Availability of SA5212

	To Download SA5212 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .